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| SMD Type MOS Field Effect Transistor 2SK1959 SOT-89 IC MOSFET Unit: mm 1.50 +0.1 -0.1 Features Gate can be driven by 1.5V Low ON resistance RDS(on)=3.2 MAX.@VGS=1.5V,ID=50mA RDS(on)=0.5 MAX.@VGS=4.0V,ID=1A 4.50 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 0.40 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate +0.1 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID PD Tch Tstg Rating 16 7 2.0 2.0 150 -55 to +150 Unit V V A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to Source Cutoff Voltage Forward transfer admittance Symbol IDSS IGSS Testconditons VDS=16V,VGS=0 VGS= 7V,VDS=0 0.5 1.0 0.8 0.36 0.28 160 VDS=3V,VGS=0,f=1MHZ 150 50 45 ID=0.5A,VGS(on)=3V,RL=6 ,VDD=3V,RG=10 190 180 210 3.2 0.6 0.5 pF pF pF ns ns ns ns 0.8 Min Typ Max 100 10 1.1 Unit A A V S VGS(off) VDS=3V,ID=100 A Yfs VDS=3V,ID=1.0A VGS=1.5V,ID=50mA Drain to source on-state resistance RDS(on) VGS=2.5V,ID=0.5A VGS=4.0V,ID=1.0A Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf www.kexin.com.cn 1 |
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